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MTSF3N02HD Datasheet(PDF) 3 Page - ON Semiconductor |
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MTSF3N02HD Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 12 page  MTSF3N02HD http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Cpk ≥ 2.0) (Notes 2 & 4) (VGS = 0 Vdc, ID = 250 μAdc) Temperature Coefficient (Positive) V(BR)DSS 20 − − 16 − − Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS − − − − 1.0 25 μAdc Gate−Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0 Vdc) IGSS − − 100 nAdc ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (Cpk ≥ 2.0) (Note 4) (VDS = VGS, ID = 250 μAdc) Threshold Temperature Coefficient (Negative) VGS(th) 0.7 − 0.98 2.65 1.1 − Vdc mV/°C Static Drain−to−Source On−Resistance (Cpk ≥ 2.0) (Note 4) (VGS = 4.5 Vdc, ID = 3.8 Adc) (VGS = 2.7 Vdc, ID = 1.9 Adc) RDS(on) − − 30 40 40 50 mΩ Forward Transconductance (VDS = 10 Vdc, ID = 1.9 Adc) (Note 2) gFS 4.0 7.5 − Mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 15 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss − 475 − pF Output Capacitance Coss − 255 − Transfer Capacitance Crss − 110 − SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time (VDS = 10 Vdc, ID = 3.8 Adc, VGS = 4.5 Vdc, RG = 6 Ω) (Note 2) td(on) − 9.5 − ns Rise Time tr − 45 − Turn−Off Delay Time td(off) − 50 − Fall Time tf − 62 − Turn−On Delay Time (VDD = 10 Vdc, ID = 1.9 Adc, VGS = 2.7 Vdc, RG = 6 Ω) (Note 2) td(on) − 19 − ns Rise Time tr − 130 − Turn−Off Delay Time td(off) − 38 − Fall Time tf − 47 − Gate Charge (VDS = 16 Vdc, ID = 3.8 Adc, VGS = 4.5 Vdc) QT − 12 17 nC Q1 − 1.0 − Q2 − 5.0 − Q3 − 3.5 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 3.8 Adc, VGS = 0 Vdc) (Note 2) (IS = 3.8 Adc, VGS = 0 Vdc, TJ = 125°C) VSD − − 0.83 0.68 1.0 − Vdc Reverse Recovery Time (IS = 3.8 Adc, VGS = 0 Vdc, dIS/dt = 100 A/μs) (Note 2) trr − 46 − ns ta − 23 − tb − 23 − Reverse Recovery Storage Charge QRR − 0.05 − μC 2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperature. 4. Reflects typical values. Cpk = Max limit − Typ 3 x SIGMA |
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