MGSF3455XT3 datasheet(2/4 Pages) ONSEMI

2 / 4 page

MGSF3455XT1

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 10 μA)

V(BR)DSS

—

Vdc

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)

(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 70°C)

IDSS

—

1.0

5.0

μAdc

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

—

±100

nAdc

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 μAdc)

VGS(th)

1.0

—

Vdc

Static Drain−to−Source On−Resistance

(VGS = 10 Vdc, ID = 1.45 A)

(VGS = 4.5 Vdc, ID = 1.2 A)

rDS(on)

—

0.080

0.134

0.100

0.190

Ohms

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 5.0 V)

Ciss

—

Output Capacitance

(VDS = 5.0 V)

Coss

—

Transfer Capacitance

(VDG = 5.0 V)

Crss

—

SWITCHING CHARACTERISTICS(2)

Turn−On Delay Time

(VDD = 15 Vdc, ID = 1.0 A,

VGEN = 10 V, RL = 10 Ω)

td(on)

—

Rise Time

—

Turn−Off Delay Time

td(off)

—

Fall Time

—

Gate Charge

—

3000

—

SOURCE−DRAIN DIODE CHARACTERISTICS

Continuous Current

—

1.0

Pulsed Current

ISM

—

5.0

Forward Voltage(2)

VSD

—

0.85

—

(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

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