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NCP45522IMNTWG-L Datasheet(PDF) 3 Page - ON Semiconductor

Part # NCP45522IMNTWG-L
Description  Advanced Load Management
PDF  10 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP45522IMNTWG-L Datasheet(HTML) 3 Page - ON Semiconductor

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NCP45522, NCP45523
http://onsemi.com
3
Table 3. OPERATING RANGES
Rating
Symbol
Min
Max
Unit
Supply Voltage
VCC
3
5.5
V
Input Voltage
VIN
0.5
13.5
V
Ground
GND
0
V
Ambient Temperature
TA
−40
85
°C
Junction Temperature
TJ
−40
125
°C
Table 4. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Conditions (Note 8)
Symbol
Min
Typ
Max
Unit
MOSFET
On−Resistance
VCC = 3.3 V; VIN = 1.8 V
RON
18.0
24.0
m
W
VCC = 3.3 V; VIN = 5 V
18.8
25.0
VCC = 3.3 V; VIN = 12 V
21.9
31.7
Leakage Current (Note 9)
VEN = 0 V; VIN = 13.5 V
ILEAK
0.1
1
mA
CONTROLLER
Supply Standby Current (Note 10)
VEN = 0 V; VCC = 3 V
ISTBY
0.65
2
mA
VEN = 0 V; VCC = 5.5 V
3.2
4.5
Supply Dynamic Current (Note 11)
VEN = VCC = 3 V; VIN = 12 V
IDYN
280
400
mA
VEN = VCC = 5.5 V; VIN = 1.8 V
530
750
Bleed Resistance
VEN = 0 V; VCC = 3 V
RBLEED
86
115
144
W
VEN = 0 V; VCC = 5.5 V
72
97
121
Bleed Pin Leakage Current
VEN = VCC = 3 V, VIN = 1.8 V
IBLEED
6
10
mA
VEN = VCC = 3 V, VIN = 12 V
60
70
EN Input High Voltage
VCC = 3 V − 5.5 V
VIH
2
V
EN Input Low Voltage
VCC = 3 V − 5.5 V
VIL
0.8
V
EN Input Leakage Current
NCP45522−H; NCP45523−H; VEN = 0 V
IIL
90
500
nA
NCP45522−L; NCP45523−L; VEN = 5.5 V
IIH
90
500
EN Pull Down Resistance
NCP45522−H; NCP45523−H
RPD
76
100
124
k
W
EN Pull Up Resistance
NCP45522−L; NCP45523−L
RPU
76
100
124
k
W
PG Output Low Voltage (Note 12)
NCP45522; VCC = 3 V; ISINK = 5 mA
VOL
0.2
V
PG Output Leakage Current (Note 13)
NCP45522; VCC = 3 V; VTERM = 3.3 V
IOH
5
100
nA
Slew Rate Control Constant (Note 14)
NCP45523; VCC = 3 V
KSR
24
31
38
mA
FAULT PROTECTIONS
Thermal Shutdown Threshold (Note 15)
VCC = 3 V − 5.5 V
TSDT
145
°C
Thermal Shutdown Hysteresis (Note 15)
VCC = 3 V − 5.5 V
THYS
20
°C
VIN Undervoltage Lockout Threshold
VCC = 3 V
VUVLO
0.25
0.35
0.45
V
VIN Undervoltage Lockout Hysteresis
VCC = 3 V
VHYS
20
50
70
mV
Short−Circuit Protection Threshold
VCC = 3 V; VIN = 0.5 V
VSC
200
265
350
mV
VCC = 3 V; VIN = 13.5 V
100
285
500
8. VEN shown only for NCP45522−H, NCP45523−H (EN Active−High) unless otherwise specified.
9. Average current from VIN to VOUT with MOSFET turned off.
10. Average current from VCC to GND with MOSFET turned off.
11. Average current from VCC to GND after charge up time of MOSFET.
12. PG is an open-drain output that is pulled low when the MOSFET is disabled.
13. PG is an open-drain output that is not driven when the gate of the MOSFET is fully charged, requires an external pull up resistor
≥ 1 kW to
an external voltage source, VTERM.
14. See Applications Information section for details on how to adjust the slew rate.
15. Operation above TJ = 125°C is not guaranteed.



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