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DMN53D0L Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMN53D0L
Description  N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  5 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN53D0L Datasheet(HTML) 2 Page - Diodes Incorporated

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DMN53D0L
Document number: DS37029 Rev. 2 - 2
2 of 5
www.diodes.com
May 2014
© Diodes Incorporated
DMN53D0L
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain Source Voltage
VDSS
50
V
Gate-Source Voltage
VGSS
±20
V
Drain Current (Note 6)
ID
500
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
370
mW
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
344
°C/W
Total Power Dissipation (Note 6)
PD
540
mW
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
236
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
50
⎯
⎯
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
1.0
µA
VDS = 50V, VGS = 0V
Gate-Body Leakage
IGSS
⎯
⎯
10
µA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
0.8
⎯
1.5
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
RDS(ON)
⎯
⎯
⎯
⎯
⎯
⎯
1.6
2.5
4.5
Ω
VGS = 10V, ID = 500mA
VGS = 4.5V, ID = 200mA
VGS = 2.5V, ID = 100mA
Source-Drain Diode Forward Voltage
VSD
⎯
⎯
1.4
V
VGS = 0V, IS = 500mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
⎯
46
⎯
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
⎯
5.3
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
4.0
⎯
pF
Total Gate Charge
Qg
⎯
0.6
⎯
nC
VGS = 4.5V, VDS = 10V,
ID = 250mA
Gate-Source Charge
Qgs
⎯
0.2
⎯
nC
Gate-Drain Charge
Qgd
⎯
0.1
⎯
nC
Turn-On Delay Time
tD(on)
⎯
2.7
⎯
ns
VDD = 30V, VGS = 10V,
RG = 25Ω, ID = 200mA
Turn-On Rise Time
tr
⎯
2.5
⎯
ns
Turn-Off Delay Time
tD(off)
⎯
19
⎯
ns
Turn-Off Fall Time
tf
⎯
11
⎯
ns
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.



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