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DMN67D8L Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMN67D8L
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  6 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN67D8L Datasheet(HTML) 2 Page - Diodes Incorporated

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DMN67D8L
Document number: DS38024 Rev. 1 - 2
2 of 6
www.diodes.com
September 2015
© Diodes Incorporated
DMN67D8L
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
TA = +25°C
TA = +85°C
ID
210
150
mA
Maximum Body Diode Forward Current (Note 6)
IS
500
mA
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
IDM
800
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
340
mW
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RθJA
376
°C/W
Total Power Dissipation (Note 6)
PD
570
mW
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RθJA
224
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
60
V
VGS = 0V, ID = 10µA
Zero Gate Voltage Drain Current
IDSS
1.0
µA
VDS = 60V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
1.0
2.5
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
RDS(ON)
3.2
1.5
7.5
5.0
VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
Forward Transconductance
gFS
80
mS
VDS =10V, ID = 0.2A
Diode Forward Voltage
VSD
0.78
1.5
V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
22
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
4.1
pF
Reverse Transfer Capacitance
Crss
2.5
pF
Gate Resistance
Rg

120
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 4.5V)
Qg

361
pC
VDS = 10V, ID = 250mA
Total Gate Charge (VGS = 10V)
Qg

821
Gate-Source Charge
Qgs

162
Gate-Drain Charge
Qgd

116
Turn-On Delay Time
tD(ON)
2.8
ns
VDD = 30V, ID = 0.2A,
RL = 150, VGEN = 10V, RGEN =
25
Turn-On Rise Time
tR
3.0
Turn-Off Delay Time
tD(OFF)

7.6
Turn-Off Fall Time
tF

5.6
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6.
Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.



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