Electronic Components Datasheet Search
  New Zealand  ▼
ALLDATASHEET.CO.NZ

X  

DMTH4007SPS Datasheet(PDF) 3 Page - Diodes Incorporated

Part # DMTH4007SPS
Description  40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMTH4007SPS Datasheet(HTML) 3 Page - Diodes Incorporated

  DMTH4007SPS Datasheet HTML 1Page - Diodes Incorporated DMTH4007SPS Datasheet HTML 2Page - Diodes Incorporated DMTH4007SPS Datasheet HTML 3Page - Diodes Incorporated DMTH4007SPS Datasheet HTML 4Page - Diodes Incorporated DMTH4007SPS Datasheet HTML 5Page - Diodes Incorporated DMTH4007SPS Datasheet HTML 6Page - Diodes Incorporated DMTH4007SPS Datasheet HTML 7Page - Diodes Incorporated DMTH4007SPS Datasheet HTML 8Page - Diodes Incorporated  
Zoom Inzoom in Zoom Outzoom out
 3 / 8 page
background image
POWERDI is a registered trademark of Diodes Incorporated.
DMTH4007SPS
Document number: DS37358 Rev. 4 - 2
3 of 8
www.diodes.com
November 2015
© Diodes Incorporated
DMTH4007SPS
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
40
—
—
V
VGS = 0V, ID = 1mA
Zero Gate Voltage Drain Current
IDSS
—
—
1
μA
VDS = 32V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
2
—
4
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)
—
4.9
7.6
m
Ω
VGS = 10V, ID = 20A
Diode Forward Voltage
VSD
—
—
1.2
V
VGS = 0V, IS = 20A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
—
2,082
—
pF
VDS = 25V, VGS = 0V,
f = 1MHz
Output Capacitance
Coss
—
790
—
Reverse Transfer Capacitance
Crss
—
113
—
Gate Resistance
Rg
—
0.46
—
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
Qg
—
41.9
—
nC
VDS = 30V, ID = 20A, VGS = 10V
Gate-Source Charge
Qgs
—
10
—
Gate-Drain Charge
Qgd
—
11.5
—
Turn-On Delay Time
tD(ON)
—
7
—
ns
VDD = 30V, VGS = 10V,
ID = 20A, RG = 3Ω
Turn-On Rise Time
tR
—
11.5
—
Turn-Off Delay Time
tD(OFF)
—
15.6
—
Turn-Off Fall Time
tF
—
8.8
—
Body Diode Reverse Recovery Time
tRR
—
29.9
—
ns
IF = 20A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
QRR
—
23
—
nC
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.



Html Pages

1 2 3 4 5 6 7 8


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com