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DMTH6004LPS Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMTH6004LPS
Description  60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMTH6004LPS Datasheet(HTML) 4 Page - Diodes Incorporated

  DMTH6004LPS Datasheet HTML 1Page - Diodes Incorporated DMTH6004LPS Datasheet HTML 2Page - Diodes Incorporated DMTH6004LPS Datasheet HTML 3Page - Diodes Incorporated DMTH6004LPS Datasheet HTML 4Page - Diodes Incorporated DMTH6004LPS Datasheet HTML 5Page - Diodes Incorporated DMTH6004LPS Datasheet HTML 6Page - Diodes Incorporated DMTH6004LPS Datasheet HTML 7Page - Diodes Incorporated  
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POWERDI is a registered trademark of Diodes Incorporated.
DMTH6004LPS
Document number: DS37769 Rev. 2 - 2
4 of 7
www.diodes.com
December 2015
© Diodes Incorporated
DMTH6004LPS
0
0.001
0.002
0.003
0.004
0.005
0.006
0.007
0.008
-50
-25
0
25
50
75
100 125 150 175
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
V
GS=10V, ID=25A
V
GS=4.5V, ID=20A
0
0.5
1
1.5
2
2.5
-50
-25
0
25
50
75
100 125 150 175
T
J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Temperature
I
D=250μA
I
D=1mA
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f=1MHz
Ciss
Coss
Crss
0
5
10
15
20
25
30
35
40
45
50
0
0.3
0.6
0.9
1.2
1.5
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
V
GS=0V, TA=-55℃
V
GS=0V, TA=25℃
V
GS=0V, TA=85℃
V
GS=0V, TA=125℃
V
GS=0V, TA=150℃
V
GS=0V, TA=175℃
0
2
4
6
8
10
0
10
20
30
40
50
60
70
80
90 100
Q
g (nC)
Figure 11. Gate Charge
V
DS=30V, ID=25A
0.1
1
10
100
1000
0.1
1
10
100
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
P
W =10ms
P
W =100µs
R
DS(ON) Limited
P
W =1ms
P
W =100ms
T
J(Max) = 175℃
T
C = 25℃
Single Pulse
DUT on Infinite Heatsink
V
GS= 10V
P
W =1s
P
W =10µs
P
W =1µs



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