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DMN3033LSNQ Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMN3033LSNQ
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  6 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN3033LSNQ Datasheet(HTML) 2 Page - Diodes Incorporated

  DMN3033LSNQ Datasheet HTML 1Page - Diodes Incorporated DMN3033LSNQ Datasheet HTML 2Page - Diodes Incorporated DMN3033LSNQ Datasheet HTML 3Page - Diodes Incorporated DMN3033LSNQ Datasheet HTML 4Page - Diodes Incorporated DMN3033LSNQ Datasheet HTML 5Page - Diodes Incorporated DMN3033LSNQ Datasheet HTML 6Page - Diodes Incorporated  
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DMN3033LSNQ
Document number: DS37997 Rev. 1 - 2
2 of 6
www.diodes.com
June 2015
© Diodes Incorporated
DMN3033LSNQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
20
V
Drain Current (Note 6) Continuous
TA = +25°C
TA = +70°C
ID
6
5
A
Pulsed Drain Current (Note 7)
IDM
24
A
Body-Diode Continuous Current (Note 6)
IS
2.25
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 6)
PD
1.4
W
Thermal Resistance, Junction to Ambient (Note 6) t
≤10s
RJA
90
°C /W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes:
6. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t
10s.
7. Repetitive Rating, pulse width limited by junction temperature.
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
30
V
ID = 250µA, VGS = 0V
Zero Gate Voltage Drain Current
TJ = 25°C
IDSS
1
5
µA
VDS = 30V, VGS = 0V
(Note 9) TJ = 55°C
Gate-Body Leakage Current
IGSS
100
nA
VDS = 0V, VGS = 20V
Gate Threshold Voltage
VGS(th)
1.0
2.1
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance (Note 8)
RDS (ON)
25
36
30
40
m
Ω
VGS = 10V, ID = 6A
VGS = 4.5V, ID = 5A
Forward Transconductance (Note 8)
gFS
5
S
VDS = 10V, ID = 8A
Diode Forward Voltage (Note 8)
VSD
0.7
1.1
V
IS = 2.25A, VGS = 0V
DYNAMIC PARAMETERS (Note 9)
Total Gate Charge
Qg
10.5
nC
VGS = 5V, VDS = 15V, ID = 6A
Gate-Source Charge
Qgs
3.8
nC
VGS = 10V, VDS = 15V, ID = 6A
Gate-Drain Charge
Qgd
2.9
nC
VGS = 10V, VDS = 15V, ID = 6A
Turn-On Delay Time
tD(on)
11
ns
VDD = 15V, VGS = 10V,
RD = 1.8Ω, RG = 6Ω
Turn-On Rise Time
tr
7
ns
Turn-Off Delay Time
tD(off)
63
ns
Turn-Off Fall Time
tf
30
ns
Input Capacitance
Ciss

755
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss

136
pF
Reverse Transfer Capacitance
Crss

108
pF
Notes:
8. Test pulse width t = 300ms.
9. Guaranteed by design. Not subject to production testing.



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