D3V3F4U6S

Document number: DS35999 Rev. 3 - 2

2 of 4

www.diodes.com

June 2013

© Diodes Incorporated

D3V3F4U6S

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Current

5

A

8/20µs, Per Figure 3

ESD Protection – Contact Discharge

±8

kV

Standard IEC 61000-4-2

ESD Protection – Air Discharge

±15

kV

Standard IEC 61000-4-2

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

200

mW

Thermal Resistance, Junction to Ambient (Note 5)

625

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Working Voltage

—

—

3.3

V

—

Reverse Current (Note 6, 7)

—

—

200

nA



Reverse Breakdown Voltage

6.0

—

—

V

Forward Voltage

0.6

0.8

0.95

V

Reverse Clamping Voltage, Positive Transients

—

10.0

—

V

Reverse Clamping Voltage, Negative Transients

—

-1.7

—

V

Dynamic Resistance

—

0.9

—



Capacitance

—

0.85

1.2

pF

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at

http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

7. Measured from pin 1, 3, 4, 5 or 6 to pin 2.

8. For information on the impact of Diodes' USB 2.0 compatible ESD protectors on signal integrity including eye diagram plots, please refer to AN77 at the

following URL: http://www.diodes.com/destools/appnote_dnote.html.

0

125

175

150

50

100

0

T , AMBIENT TEMPERATURE ( C)

Figure 1 Power Derating Curve

A

°

25

100

50

75

150

25

75

125

200

175

Note 5

0

50

25

50

75

100 125

150

T , AMBIENT TEMPERATURE (°C)

Figure 2 Pulse Derating Curve

A

0

100

25

75

175 200