FDMS86368_F085 datasheet(2/6 Pages) FAIRCHILD

2 / 6 page

FDMS86368_F085 Rev. C1

www.fairchildsemi.com

Electrical Characteristics T

J = 25°C unless otherwise noted.

Off Characteristics

On Characteristics

Dynamic Characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-to-Source Breakdown Voltage

ID = 250μA, VGS = 0V

IDSS

Drain-to-Source Leakage Current

VDS=80V

TJ = 25oC

μA

VGS = 0V

TJ = 175oC (Note 4)

IGSS

Gate-to-Source Leakage Current

VGS = ±20V

±100

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = 250μA

2.0

3.0

4.0

RDS(on)

Drain to Source On Resistance

ID = 80A,

VGS= 10V

TJ = 25oC

3.7

4.5

TJ = 175oC (Note 4)

7.4

9.0

Ciss

Input Capacitance

VDS = 40V, VGS = 0V,

f = 1MHz

4350

Coss

Output Capacitance

636

Crss

Reverse Transfer Capacitance

Gate Resistance

f = 1MHz

2.5

Qg(ToT)

Total Gate Charge

VGS = 0 to 10V

VDD = 64V

ID = 80A

-57

Qg(th)

Threshold Gate Charge

VGS = 0 to 2V

Qgs

Gate-to-Source Gate Charge

-23

Qgd

Gate-to-Drain “Miller“ Charge

Switching Characteristics

Drain-Source Diode Characteristics

Note:

4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.

ton

Turn-On Time

VDD = 40V, ID = 80A,

VGS = 10V, RGEN = 6Ω

td(on)

Turn-On Delay

Rise Time

td(off)

Turn-Off Delay

Fall Time

toff

Turn-Off Time

VSD

Source-to-Drain Diode Voltage

ISD =80A, VGS = 0V

1.25

ISD = 40A, VGS = 0V

1.2

trr

Reverse-Recovery Time

IF = 80A, dISD/dt = 100A/μs

VDD = 64V

-58

Qrr

Reverse-Recovery Charge

FDMS86368_F085 Datasheet(PDF) 2 Page - Fairchild Semiconductor

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