Advanced Photonix, Inc.

FEATURES

DESCRIPTION

APPLICATIONS

• High output power

• High reliability

• Wide emission angle

SYMBOL PARAMETER

MIN

MAX

UNITS

Power Dissipation

160

mW

Continuous Forward Current

100

mA

Peak Forward Current

3.0

A

Reverse Voltage

5

V

Storage Temperature

-55

+100

°C

Operating Temperature

-55

+100

°C

Soldering Temperature*

+240

°C

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Output Power

4

5.6

mW

Forward Voltage

1.5

1.9

V

Reverse Breakdown Voltage

5

30

V

Peak Wavelength

865

880

895

nm

Spectral Bandwidth @ 50% (FWHM)

65

nm

Terminal Capacitance

15

pF

Rise Time

0.75

uS

Fall Time

0.40

uS

Ø0.019 [0.48]

Ø0.178 [4.52]

Ø0.195 [4.95]

1.00 [25.4] MIN

Ø0.016 [0.41]

BOTTOM SIDE ANODE

Ø0.005 [Ø0.13]

0.025 [0.64]

0.022 [0.56]

CATHODE

0.100 [2.54]

C

L

45°

L

C

L

C

Ø0.212 [5.38]

Ø0.209 [5.31]

& CASE

ANODE

L

C

CATHODE

0.040

[1.02]

L.E.D.

WINDOW CAP

HEADER

0.145 [3.68]

0.013 [0.33] SQ

(WELDED)

0.098 [2.49]

0.112 [2.84]

0.145 [3.68]

GaAlAs High Power IR LED Emitters

PDI-E801

PACKAGE DIMENSIONS INCH [mm]

TO-46 CAN PACKAGE

The PDI-E801 is an 880 nm high power GaAlAs

infrared emitter packaged in a hermetic TO-46

metal header with a flat window glass.

• Photoelectric switches

• Optical encoders

• Infrared sources

* 1/16 inch from case for 3 seconds max.

Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are

subject to change without notice. © 2007 Advanced Photonix, Inc. All rights reserved.

REV 5/24/07

CHIP DIMENSIONS INCH [mm]

0

20

40

60

80

100

-60

-50

-40

-30

-20

-10

0

10

203040

5060

Beam Angle (deg)

RADIATION PATTERN