DESDALC5LP

Document number: DS36761 Rev. 2 - 2

2 of 6

www.diodes.com

May 2014

© Diodes Incorporated

DESDALC5LP

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Power Dissipation

150

W

8/20µs

Peak Pulse Current

9

A

8/20µs

ESD Protection – Contact Discharge

±30

kV

IEC 61000-4-2 Standard

ESD Protection – Air Discharge

±30

kV

IEC 61000-4-2 Standard

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Package Power Dissipation (Note 5)

250

mW

Thermal Resistance, Junction to Ambient (Note 5)

500

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Breakdown Voltage

11

13

17

V

5.8

8

11

Reverse Current (Note 6)

—

—

25

nA

Dynamic Resistance, from Pin 1 to Pin 2

—

0.19

—

Ω

Dynamic Resistance, from Pin 2 to Pin 1

—

0.19

—

Ω

Capacitance

—

26

30

pF

Clamping Voltage, from Pin 1 to Pin 2

—

21

—

V

8kV contact discharge after 30ns

IEC61000-4-2

Clamping Voltage, from Pin 2 to Pin 1

—

12

—

V

8kV contact discharge after 30ns

IEC61000-4-2

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at

http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0

25

50

75

100

125

0.0

0.1

150

1.1

T (°C)

J

Figure 1 Normalized Peak Pulse Power vs.

Initial Junction Temperature

8/20µs

T (°C)

J

Figure 2 Leakage Current vs. Junction Temperature

(Typical Values)

1

10

100

25

50

75

100

125

150

V = V

= 5V

From Pin 1 to Pin 2

RRM