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BAS170 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BAS170 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 4 page  Aug-06-2001 1 BAS170W VPS05176 1 2 Silicon Schottky Diode General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detection and mixing Type Marking Pin Configuration Package BAS170W 7 1 = C 2 = A - SOD323 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 70 V Forward current IF 70 mA Surge forward current, t 10 ms IFSM 100 Total power dissipation TS = 97 °C Ptot 250 mW Junction temperature Tj 150 °C Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS 190 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
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