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PAM8403H Datasheet(PDF) 4 Page - Diodes Incorporated |
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PAM8403H Datasheet(HTML) 4 Page - Diodes Incorporated |
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4 / 11 page ![]() PAM8403H Document number: DSxxxxx Rev. 1 - 0 4 of 11 www.diodes.com November 2012 © Diodes Incorporated PAM8403H A Product Line of Diodes Incorporated Thermal Information Parameter Package Symbol Max Unit Thermal Resistance (Junction to Ambient) SOP-16 θJA 110 °C/W Thermal Resistance (Junction to Case) SOP-16 θJC 23 Internal Power Dissipation (@ TA = +25°C) SOP-16 PD 90 mW Note: 1. The maximun output current for SOT23-5 package is limited by internal power dissipation capacity as described in Application Information here inafter. Electrical Characteristics (@TA = +25°C, VDD = 5V, Gain = 24dB, RL = 8Ω, unless otherwise specified.) Symbol Parameter Test Conditions Min Typ Max Units VIN Supply Voltage 2.5 5.5 V PO Output Power THD+N = 10%,f = 1kHz , RL = 4Ω VDD = 5.0V 2.85 3.20 W THD+N =1%, f = 1kHz, RL = 4Ω VDD = 5.0V 2.25 2.50 W THD+N =10%,f = 1kHz, RL = 8Ω VDD = 5.0V 1.5 1.8 W THD+N = 1%, f = 1kHz, RL = 8Ω VDD = 5.0V 1.2 1.4 W THD+N Total Harmonic Distortion Plus Noise VDD = 5.0V,PO = 0.5W, RL = 8Ω f = 1kHz 0.15 0.20 % VDD = 5.0V, PO = 1W, RL = 4Ω f = 1kHz 0.15 0.20 % GV Gain 23 24 25 dB PSRR Power Supply Ripple Rejection VDD = 5.0V, Inputs AC-grounded with CIN = 0.47μF f = 100Hz -59 -50 dB f = 1kHz -58 -50 dB CS Crosstalk VDD = 5V, PO = 0.5W, RL = 8Ω, GV = 20dB f = 1kHz -95 -80 dB SNR Signal-to-Noise Ration VDD = 5V, VORMS = 1V,GV = 20dB f = 1kHz 74 80 dB VN Output Noise VDD = 5V, Inputs AC-Grounded with CIN = 0.47μF A-weighting 100 200 No A-weighting 150 300 µV IQ Quiescent Current VDD = 5.0V No load 16 20 mA IMUTE Muting Current VDD = 5.0V VMUTE = 0.3V 8 12 mA ISD Shutdown Current VDD = 2.5V to 5.5V VSD = 0.3V 20 µA VOS Output Offset Voltage VIN = 0V, VDD = 5V 10 mV VIH Enable Input High Voltage VDD = 5.0V 1.5 V VIL Enable Input LowVoltage VDD = 5.0V 0.4 V VIH MUTE Input High Voltage VDD = 5.0V 1.5 V VIL MUTE Input Low Voltage VDD = 5.0V 0.4 V |
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