BC3770 datasheet(8/45 Pages) FREESCALE

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Analog Integrated Circuit Device Data



Freescale Semiconductor

BC3770

Power Switches

RDS(on)_Q1

Reverse Blocking MOSFET On-resistance

•Q1 FET

—



RDS(on)_Q2

Internal High-side MOSFET On-resistance

•Q2 FET

—



RDS(on)_Q3

Internal Low-side MOSFET On-resistance

•Q3 FET

—



RDS(on)_Q4

CHGOUT to VSYS MOSFET On-resistance

•Q4 FET

—



VSYS Output

VVSYS_MIN

VSYS Min. Regulation Voltage in IIN_LIM  IVSYS

• In both Trickle and pre-charge mode (VBATREG < VVSYS_MIN),

ISYS = 500 mA

3.5

3.6

3.71

VVSYS_MIN_OLP

VSYS Min Regulation Voltage in IIN_LIM < IVSYS (VSYS overloaded)

• VSYS falling in VSYS overloaded in VBUSOK = 1

3.3

3.4

—

VVSYS_MAX

SYS Max Regulation Voltage

• In VBUSOK = 1, ISYS_LOAD = 0 mA, ICHG = 1.5 A

—

VBATREG +

ICHG *

RDSON_Q4

VBATREG +

0.1 V

VSYSOK Threshold

• VSYS rising in VBUSOK = 1, VSYSOK bit set to 1

3.4

3.5

3.61

(8)

VSYSNG Threshold

• VSYS falling, VSYSNG bit set to 1

3.2

3.3

—

(8)

VSYS_REVERSE

Ideal Diode Regulation Voltage

• VSYS falling below BATREG, ISYS_LOAD = 3.0 A

—

VBATREG -

50 mV

VBATREG -

75 mV

(8)



VSYSLOAD

Load Regulation in Transition

•ISYS = 1.0 mA to 1.0 A in tR = 20 s

VBATREG -

0.2

VBATREG -

0.1

—

(8)

VSYS_UVLO

VSYS Undervoltage Lockout Threshold

• VSYS falling, 200 mV Hysteresis

2.3

2.4

2.5

tDIODE-ON

Ideal Diode Turn-on Time

—

s

tDIODE_OFF

Ideal Diode Turn-off Time

—

s

Battery Charger

VBATREG_RNG

BATREG Programmable Voltage Range

• Programmable in 25 mV steps

4.1

—

4.475

VBAT_REG

Voltage Accuracy

•IFAST_CHG = 0 mA, set to 4.2 V and 4.35 V at VBATREG

TA = 25 °C

TA = -40 to 85

-0.5

-1.0

—

0.5

1.0

VRCH

Recharge Threshold

•VBATREG - VBAT_REG

—

-100

—

Notes

Guaranteed by design, characterization, and correlation with process controls. Not fully tested in production.

Designed and simulated according to I2C specifications except general call support.

10.

The regulation in boost is only guaranteed in the operation range.

Table 4. BC3770 Electrical Characteristics (continued)

Characteristics noted under conditions: VVBUS = 5.0 V, VBATREG = 3.7 V, VVIO = 1.8 V, CVBUS = CPMID = 2.2 F, CVSYS = 10 F,

CCHGOUT = 4.7 F, CVL = 1.0 F, L = 1.0 H, TA = - 40 °C to 85 °C *). Typical values are at TA = 25°C, unless otherwise noted. (6)

Symbol

Characteristic

Min

Typ

Max

Unit

Notes

BC3770 Datasheet(PDF) 8 Page - Freescale Semiconductor, Inc

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