STD16N60M2 datasheet(3/16 Pages) STMICROELECTRONICS

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STD16N60M2

Electrical ratings

DocID027191 Rev 2

3/16

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC= 100 °C

7.6

IDM

(1)

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

110

dv/dt

(2)

Peak diode recovery voltage slope

V/ns

dv/dt

(3)

MOSFET dv/dt ruggedness

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

Notes:

(1)

Pulse width limited by safe operating area.

(2)

ISD

≤ 12 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS.

(3)

VDS

≤ 480 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max.

1.14

°C/W

Rthj-pcb

(1)

Thermal resistance junction-pcb max.

°C/W

Notes:

(1)

When mounted on a 1-inch² FR-4, 2 oz Cu board

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetetive or not repetetive

(pulse width limited by Tjmax)

2.9

EAS

Single pulse avalanche energy (starting

Tj = 25 °C, ID = IAR, VDD = 50 V)

130

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