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STAP85025S Datasheet(PDF) 1 Page - STMicroelectronics

Part # STAP85025S
Description  RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STAP85025S Datasheet(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
December 2015
DocID15795 Rev 5
1/13
STAP85025S
RF power transistor, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
Datasheet
- production data
Figure 1. Pin connection
Features
• Excellent thermal stability
• Common source configuration
• POUT = 25 W with 15.7 dB gain @ 870 MHz /
13.6 V
• Plastic package
• ESD protection
• In compliance with the 2002/95/EC European
directive
Description
The STAP85025S is a common source N-
channel, enhancement-mode lateral field-effect
RF power transistor. It is designed for high gain,
broadband commercial and industrial
applications. It operates at 13.6 V in common
source mode at a frequency up to 1 GHz. The
STAP85025S boasts the excellent gain, linearity
and reliability of ST’s latest LDMOS technology
mounted in STAP® ST advanced PowerSO-10
RF package. The STAP85025S superior linearity
performance makes it an ideal solution for the car
mobile radio.
The STAP® ST plastic package has been
designed to offer high reliability and high power
capability. It has been specially optimized for RF
needs and offers excellent RF performance and
ease of assembly.
STAP1
Drain
Gate
Source
Table 1. Device summary
Order code
Marking
Package
Packing
STAP85025S
STAP85025S
STAP1
Tube
www.st.com


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