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STGD10HF60KD

Electrical ratings

21

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

600

V

(1)

1.

Calculated according to the iterative formula:

18

A

(1)

10

A

(2)

2.

Turn-off latching current

30

A

(3)

3.

Pulse width limited by max. junction temperature allowed

Pulsed collector current

30

A

Gate-emitter voltage

± 20

V

± 30

V

Diode RMS forward current

7

A

sinusoidal

20

A

Total dissipation

62.5

W

10

µs

IGBT operating junction temperature

– 55 to 150

°C

Diode operating junction temperature

– 55 to 175

°C

Storage temperature

– 65 to 150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

2

°C/W

5.8

°C/W

100

°C/W

I

()

T

jmax

()

T

C

–

R

thj

c

–

V

CE sat

() max

()

,

()

×

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