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STL66N3LLH5 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STL66N3LLH5
Description  Automotive-grade dual N-channel 30 V, 4.5 mΩ typ., 80 A STripFET™ H5 Power MOSFET in a PowerFLAT™ 5x6 package
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL66N3LLH5 Datasheet(HTML) 3 Page - STMicroelectronics

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STL66N3LLH5
Electrical ratings
DocID022356 Rev 3
3/15
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
30
V
VGS
Gate-source voltage
±22
V
ID(1)
Drain current (continuous) at Tcase = 25 °C
80
A
Drain current (continuous) at Tcase = 100 °C
57
ID(2)
Drain current (continuous) at Tpcb = 25 °C
21
A
Drain current (continuous) at Tpcb = 100 °C
14.5
IDM(2)(3)
Drain current (pulsed)
84
A
PTOT(1)
Total dissipation at Tcase = 25 °C
72
W
PTOT(2)
Total dissipation at Tpcb = 25 °C
4.8
TJ
Operating junction temperature range
-55 to 175
°C
Tstg
Storage temperature range
Notes:
(1) This value is rated according to Rthj-c
(2) This value is rated according to Rthj-pcb
(3) Pulse width is limited by safe operating area.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
2.08
°C/W
Rthj-pcb(1)
Thermal resistance junction-pcb
31.3
Notes:
(1) When mounted on a 1-inch² FR-4, 2 Oz copper board, t < 10 s.
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAV
Avalanche current, not repetitive
10.5
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAV, VDD = 24 V)
180
mJ



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