STPS20L60CT datasheet(3/10 Pages) STMICROELECTRONICS

3 / 10 page

DocID6427 Rev 4

3/10

STPS20L60C

Characteristics

Figure 1. Average forward power dissipation

versus average forward current (per diode)

Figure 2. Average current versus ambient

temperature (= 0.5) (per diode)

PF(av)(W)

IF(av) (A)

δ=tp/T

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

100

125

150

IF(av)(A)

δ=tp/T

Tamb(°C)

Rth(j-a)=15°C/W

Rth(j-a)=Rth(j-c)

Figure 3. Normalized avalanche power derating

versus pulse duration

Figure 4. Normalized avalanche power derating

versus junction temperature

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(tp)

(1 µs)

ARM

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(Tj)

(25 °C)

ARM

Figure 5. Non repetitive surge peak forward

current versus overload duration (maximum

values, per diode)

Figure 6. Relative variation of thermal transient

impedance junction to case versus pulse

duration

1E-3

1E-2

1E-1

1E+0

100

120

140

160

180

200

IM(A)

t(s)

δ=0.5

Tc=25°C

Tc=75°C

Tc=100°C

1E-4

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

Zth(j-c)/Rth(j-c)

tp(s)

δ=tp/T

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

STPS20L60CT Datasheet(PDF) 3 Page - STMicroelectronics

STPS20L60CT Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL