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STR1550 Datasheet(PDF) 4 Page - STMicroelectronics

Part # STR1550
Description  High voltage fast-switching NPN power transistor
PDF  9 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STR1550 Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STR1550
4/9
DocID022364 Rev 5
2
Electrical characteristics
Tcase = 25 °C unless otherwise specified.
2.1
Electrical characteristics (curves)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = 500 V
10
µA
V(BR)CBO
Collector-base
breakdown voltage
(IE = 0)
IC = 100 µA
500
V
V(BR)CEO
(1)
1.
Pulse test: pulse duration
≤ 300 µs, duty cycle ≤ 2%
Collector-emitter
breakdown voltage
(IB = 0)
IC = 1 mA
500
V
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE = 100 µA
12
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = 20 mA, IB = 2 mA
0.2
V
IC = 50 mA, IB = 6 mA
0.3
V
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = 50 mA, IB = 5 mA
0.9
V
VBE(on)
Base-emitter on voltage
IC = 50 mA, VCE = 10 V
0.9
V
hFE
(1)
DC current gain
IC = 1 mA, VCE = 10 V
100
IC = 50 mA, VCE = 10 V
100
300
IC = 100 mA, VCE = 10 V
10
Figure 2. hFE vs. IC @ VCE= 5 V
Figure 3. hFE vs. IC @ VCE= 10 V
hFE
100
10
1
0.001
0.1
IC(A)
0.01
-55°C
25°C
100°C
AM17433v1
hFE
100
10
1
0.001
0.1
IC(A)
0.01
-55°C
25°C
100°C
AM17434v1



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