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STD25NF20 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STD25NF20
Description  Automotive-grade N-channel 200 V, 0.10 ??typ., 18 A STripFET™Power MOSFET in a DPAK package
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD25NF20 Datasheet(HTML) 3 Page - STMicroelectronics

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DocID024372 Rev 3
3/16
STD25NF20
Electrical ratings
16
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
200
V
VGS
Gate-source voltage
±20
ID
Drain current (continuous) at TC = 25 °C
18
A
Drain current (continuous) at TC = 100 °C
11
IDM
(1)
1.
Pulse width limited by safe operating area.
Drain current (pulsed)
72
A
PTOT
Total dissipation at TC = 25 °C
110
W
dv/dt(2)
2.
ISD ≤ 18 A, di/dt ≤ 200 A/µs; VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS.
Peak diode recovery voltage slope
15
V/ns
Tstg
Storage temperature
-55 to 175
°C
Tj
Operating junction temperature
Table 3. Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
1.38
°C/W
Rthj-pcb
Thermal resistance junction-pcb
50(1)
1.
When mounted on 1 inch2 FR-4, 2 Oz copper board
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive (pulse
width limited by Tjmax )
18
A
EAS
Single pulse avalanche energy (starting Tj=25°C,
ID= IAR; VDD=50 V)
110
mJ



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