STF9N60M2 datasheet(3/15 Pages) STMICROELECTRONICS

Part #	STF9N60M2

Description	N-channel 600 V, 0.72 ??typ., 5.5 A MDmesh II Plus??low Qg Power MOSFETs in TO-220FP and I2PAKFP packages

PDF	15 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STF9N60M2, STFI9N60M2

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

5.5(1)

Pulse width limited by safe operating area.

Drain current (continuous) at TC = 100 °C

3.6(1)

IDM

(1)

Drain current (pulsed)

22(1)

PTOT

Total dissipation at TC = 25 °C

VISO

Insulation withstand voltage (RMS) from all three leads to

external heat sink (t=1 s; TC=25 °C)

2500

dv/dt (2)

ISD ≤ 5.5 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V

Peak diode recovery voltage slope

V/ns

dv/dt(3)

VDS ≤ 480 V

MOSFET dv/dt ruggedness

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

6.25

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse

width limited by Tjmax)

EAS

Single pulse avalanche energy (starting Tj=25°C,

ID= IAR; VDD=50)

105

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