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STPSC12H065 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STPSC12H065
Description  650 V power Schottky silicon carbide diode
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPSC12H065 Datasheet(HTML) 3 Page - STMicroelectronics

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DocID024086 Rev 2
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STPSC12H065
Characteristics
8
Figure 1. Forward voltage drop versus forward
current (typical values, low level)
Figure 2. Forward voltage drop versus forward
current (typical values, high level)
I(A)
FM
0
4
8
12
16
20
24
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Ta=150 °C
Ta=175 °C
Ta=25 °C
Pulse test : tp=500µs
Ta=100 °C
V(V)
FM
I(A)
FM
0
20
40
60
80
100
120
0123
45678
Ta=150 °C
Ta=175 °C
Ta=25 °C
Pulse test : tp=500µs
Ta=100 °C
V(V)
FM
Figure 3. Reverse leakage current versus
reverse voltage applied (typical values)
Figure 4. Peak forward current versus case
temperature
I (µA)
R
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
0
50 100 150 200 250 300 350 400 450 500 550 600 650
Tj=25 °C
Tj=150 °C
Tj=175 °C
V(V)
R
I(A)
M
0
20
40
60
80
0
25
50
75
100
125
150
175
T
δ = tp/T
tp
δ = 0.1
δ = 0.3
δ = 0.5
δ = 1.0
δ = 0.7
T (°C)
C
Figure 5. Junction capacitance versus reverse
voltage applied (typical values
)
Figure 6. Relative variation of thermal
impedance junction to case versus pulse
duration
0
100
200
300
400
500
600
0.1
1.0
10.0
100.0
1000.0
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
VR(V)
C (pF)
j
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
Zth(j-c)/Rth(j-c)
Single pulse
tp (s)



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