SCT20N120 datasheet(4/13 Pages) STMICROELECTRONICS

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Electrical characteristics

SCT20N120

4/13

DocID026413 Rev 4

Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 1200 V

VDS = 1200 V, TJ = 200 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = +22 /-10 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 1 mA

3.5

RDS(on)

Static drain-source

on-resistance

VGS = 20 V, ID = 10 A

169

239

Ω

VGS = 20 V, ID = 10 A,

TJ = 150 °C

189

Ω

VGS = 20 V, ID = 10 A,

TJ = 200 °C

220

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 400 V, f = 1 MHz,

VGS = 0

-650

Coss

Output capacitance

Crss

Reverse transfer

capacitance

-14

Total gate charge

VDD = 800 V, ID = 10 A,

VGS = 0 / 20 V

-45

Qgs

Gate-source charge

Qgd

Gate-drain charge

11.7

Gate input resistance

f=1 MHz open drain

Ω

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