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STD10P10F6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STD10P10F6 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 15 page  October 2014 DocID026365 Rev 2 1/15 This is information on a product in full production. www.st.com STD10P10F6 P- channel 100 V, 0.136 Ω typ., 10 A STripFET™ F6 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDSS RDS(on) max ID STD10P10F6 100 V 0.18 Ω 10 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packaging STD10P10F6 10P10F6 DPAK Tape and reel For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. AM11258v1 D(2, TAB) S(3) G(1) |
Similar Part No. - STD10P10F6 |
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Similar Description - STD10P10F6 |
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