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STP220N6F7 Datasheet(PDF) 5 Page - STMicroelectronics |
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STP220N6F7 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 13 page ![]() STP220N6F7 Electrical characteristics DocID026547 Rev 3 5/13 Table 7: Source drain diode Symbol Parameter Test conditions Min . Typ . Max . Un it VSD(1) Forward on voltage VGS = 0, ISD = 120 A - - 1.1 V trr Reverse recovery time ISD = 120 A, di/dt = 100 A/µs VDD = 48 V, TJ = 150 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 69 ns Qrr Reverse recovery charge - 104 nC IRRM Reverse recovery current - 3 A Notes: (1)Pulsed: pulse duration = 300 µs, duty cycle 1.5% |
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