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STPSC12H065C Datasheet(PDF) 1 Page - STMicroelectronics |
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STPSC12H065C Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 8 page ![]() This is information on a product in full production. December 2015 DocID024809 Rev 3 1/8 STPSC12H065C 650 V power Schottky silicon carbide diode Datasheet - production data Features No or negligible reverse recovery Switching behavior independent of temperature High forward surge capability ECOPACK®2 compliant component Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimized capacitive charge at turn-off behavior is independent of temperature. Especially suited for use in interleaved or bridge- less topologies, this dual-diode rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. Table 1. Device summary Symbol Value IF(AV) 2 x 6 A VRRM 650 V Tj (max) 175 °C www.st.com |
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