STWA48N60M2 datasheet(5/12 Pages) STMICROELECTRONICS

Part #	STWA48N60M2

Description	Extremely low gate charge

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STWA48N60M2

Electrical characteristics

DocID028710 Rev 1

5/12

Table 8: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current

(pulsed)

168

VSD(2)

Forward on voltage

VGS = 0, ISD = 21 A

1.6

trr

Reverse recovery time

ISD = 42 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 17:

"Unclamped inductive load test

circuit")

487

Qrr

Reverse recovery charge

9.1

µC

IRRM

Reverse recovery current

37.5

trr

Reverse recovery time

ISD = 42 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 17: "Unclamped

inductive load test circuit")

605

Qrr

Reverse recovery charge

12.5

µC

IRRM

Reverse recovery current

41.5

Notes:

(1)Pulse width limited by safe operating area.

(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%

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