TN2015H-6FP datasheet(2/9 Pages) STMICROELECTRONICS

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Characteristics

TN2015H-6FP

2/9

DocID027549 Rev 1

Characteristics

Table 2. Absolute ratings

Symbol

Parameter

Value

Unit

IT(RMS) On-state rms current (180° conduction angle)

Tc = 80 °C

IT(AV)

Average on-state current (180° conduction angle)

Tc = 80 °C

12.7

Tc = 99 °C

Tc = 112 °C

ITSM

Non repetitive surge peak on-state current

(Tj initial = 25 °C)

t = 8.3 ms

197

t = 10 ms

180

I²tI²t value for fusing (Tj initial = 25 °C)

tp = 10 ms

162

A²s

dI/dt

Critical rate of rise of on-state current

IG = 2 x IGT, tr ≤ 100 ns, Tj = 25 °C

F = 60 Hz

100

A/µs

VDRM,

VRRM

Repetitive peak off-state voltage

600

IGM

Peak gate current

tp = 20 µs

Tj = 150 °C

PG(AV) Average gate power dissipation

Tj = 150 °C

Tstg

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

°C

Maximum lead temperature for soldering during 10 s

260

°C

Vins

Insulation rms voltage, 1 minute

TO-220FPAB

2000

Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Test conditions

Value

Unit

IGT

VD = 12 V, RL = 33 Ω

Typ.

Max.

VGT

VD = 12 V, RL = 33 Ω

Max.

1.3

VGD

VD = VDRM, RL = 3.3 kΩ

Tj = 150 °C

Min.

0.2

IT = 500 mA, gate open

Max.

IG = 1.2 x IGT

Max.

dV/dt

VD = 402 V, gate open

Tj = 150 °C

Min.

750

V/µs

tgt

IT = 40 A, VD = 600 V, IG = 100 mA,

(dIG/dt)max = 0.2 A/µs

Typ

1.9

µs

VD = 402 V, VR = 25 V, IT = 20 A,

(dIG/dt)max = 30 A/µs, dVD/dt = 50 V/µs

Tj = 150 °C

Typ

µs

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