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SEMB13 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SEMB13 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 4 page  SEMB13 Feb-26-2004 1 PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two ( galvanic) internal isolated Transistors with good matching in one package • Built in bias resistors (R1=4,7kΩ, R2 =47kΩ) 1 3 6 5 4 2 EHA07173 6 54 3 2 1 C1 B2 E2 C2 B1 E1 1 R R 2 R1 R 2 TR1 TR2 Type Marking Pin Configuration Package SEMB13 WB 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base voltage VEBO 5 Input on Voltage Vi(on) 15 DC collector current IC 100 mA Total power dissipation , TS = 75 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS ≤ 300 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
Similar Part No. - SEMB13 |
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Similar Description - SEMB13 |
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