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RT3TCCM Datasheet(PDF) 1 Page - Isahaya Electronics Corporation |
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RT3TCCM Datasheet(HTML) 1 Page - Isahaya Electronics Corporation |
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1 / 4 page  PRELIMINARY RT3TCCM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ISAHAYA ELECTRONICS CORPORATION DESCRIPTION RT3TCCM is composite transistor built with RT1N136 chip and RT1P136 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circuit, Driver circuit OUTLINE DRAWING Unit：mm MAXIMUM RATING (Ta=25℃) (RTr1_NPN, RTr2_PNP) SYMBOL PARAMETER RATING UNIT VCBO Collector to Base voltage 50 V VEBO Emitter to Base voltage 6 V VCEO Collector to Emitter voltage 50 V VIN Input voltage 10 V IC Collector current 100 mA ICM Peak Collector current 200 mA PT Total dissipation 200 mW Tj Junction temperature ＋ 150 ℃ Tstg Storage temperature -55～＋150 ℃ ※ PNP built in transistor of ”－”sign is abbreviation. MARKING C TC １ 2 3 6 5 4 . TERMINAL CONNECTOR ①： EMITTER1 ②： BASE1 ③： COLLECTOR2 ④： EMITTER2 ⑤： BASE2 ⑥ :COLLECTOR1 JEITA：SC-88 JEDEC：－ R1 R2 RTr1 ① ② ④ ⑤ R2 RTr2 ③ R1 ⑥ ELECTRICAL CHARACTERISTICS (Ta=25℃) (RTr1_NPN, RTr2_PNP) Symbol Parameter Test conditions Limits Unit Min Max V(BR)CEO Collector to Emitter break down voltage I C=100µA，RBE=∞ 50 － － V ICBO Collector cut off current VCB=50V，I E =0 － － 0.1 µA IEBO Emitter cut off current VEB=5V，I C =0 332 443 642 µA hFE DC forward current gain VCE=5V，I C =5mA 33 － － － VCE(sat) Collector to Emitter saturation voltage I C =10mA，I B =0.5mA － 0.1 0.3 V VI(ON) Input on voltage VCE=0.2V，I C =5mA － 0.7 1.2 V VI(OFF) Input off voltage VCE=5V，I C =100µA 0.4 0.6 － V R1 Input resistor － 0.7 1.0 1.3 kΩ R2/R1 Resistor ratio － 8 10 12 － fT Gain band width product VCE=6V,IE=10mA RTr1 － 200 － MHZ RTr2 － 150 － ※ PNP built in transistor of ”－”sign is abbreviation. 1.25 2.1 ① ② ③ ⑤ ④ ⑥ |
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