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UT54ACTS20E Datasheet(PDF) 4 Page - Aeroflex Circuit Technology

Part # UT54ACTS20E
Description  Dual 4-Input NAND Gates
PDF  9 Pages
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Manufacturer  AEROFLEX [Aeroflex Circuit Technology]
Direct Link  http://www.aeroflex.com
Logo AEROFLEX - Aeroflex Circuit Technology

UT54ACTS20E Datasheet(HTML) 4 Page - Aeroflex Circuit Technology

  UT54ACTS20E Datasheet HTML 1Page - Aeroflex Circuit Technology UT54ACTS20E Datasheet HTML 2Page - Aeroflex Circuit Technology UT54ACTS20E Datasheet HTML 3Page - Aeroflex Circuit Technology UT54ACTS20E Datasheet HTML 4Page - Aeroflex Circuit Technology UT54ACTS20E Datasheet HTML 5Page - Aeroflex Circuit Technology UT54ACTS20E Datasheet HTML 6Page - Aeroflex Circuit Technology UT54ACTS20E Datasheet HTML 7Page - Aeroflex Circuit Technology UT54ACTS20E Datasheet HTML 8Page - Aeroflex Circuit Technology UT54ACTS20E Datasheet HTML 9Page - Aeroflex Circuit Technology  
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4
36-00-04-003
Ver. 1.0.0
Aeroflex Microelectronics Solutions - HiRel
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: VIH = VIH(min) + 20%, - 0%; VIL = VIL(max) + 0%, -
50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are
guaranteed to VIH(min) and VIL(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density
≤5.0E5 amps/cm2, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765pF/
MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and VSS at
frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7.For devices procured with a total ionizing dose tolerance guarantee, the post-irradiation performance is guaranteed at 25°C per MIL-STD-883, method 1019, condition
A up to the maximum TID level producred.
8. Power dissipation specified per switching output.
9. Power does not include power contribution of any TTL output sink current.
10. Guaranteed by characterization, but is not tested.
IOH2
High level output current10
VIN = VDD or VSS
VOH = VDD-0.4V
VDD from 3.0V to 3.6V
-6
mA
Ptotal1
Power dissipation 2, 8, 9
CL = 50pF
VDD = 4.5V to 5.5V
1.1
mW/
MHz
Ptotal2
Power dissipation 2, 8, 9
CL = 50pF
VDD = 3.0V to 3.6V
0.5
mW/
MHz
IDDQ
Quiescent Supply Current
VIN = VDD or VSS
VDD from 3.6V to 5.5V
25
μA
ΔI
DDQ
Quiescent Supply Current Delta
For input under test
VIN = VDD - 2.1V
For all other inputs
VIN = VDD or VSS
VDD = 5.5V
1.6
mA
CIN
Input capacitance 5
ƒ = 1MHz
VDD = 0V
15
pF
COUT
Output capacitance 5
ƒ = 1MHz
VDD = 0V
15
pF



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