CPDVR3E5V0P-HF

Page 1

Comchip Technology CO., LTD.

REV:A

QW-JP048

RoHS Device

Halogen Free

±10

W

3

39

Peak pulse power

ESD per IEC 61000-4-2 (Air)

Parameter

Symbol

Value

Unit

ESD per IEC 61000-4-2 (Contact)

Peak pulse current

±10

A

kV

±

16

ESD voltage

±

0.4

Per Human Body Model

Machine Model

SMD ESD Protection Diode

Company reserves the right to improve product design , functions and reliability without notice.

JESD22-A114-B ESD voltage

Mechanical data

- Mounting position: Any.

°C

-40

150

to +

260

Lead solder temperature

Junction temperature range

°C

Maximum (10 second duration)

(2)

(2)

(1)

- Low capacitance:3pF(Typ.)

- IEC61000-4-2 Level 4 ESD Protection.

- Fast response time.

- Low reverse stand-off voltage: 5V

- Low reverse clamping voltage.

Features

- Bi-directional ESD protection of one line.

- Low leakage current.

-55 to +150

Storage temperature range

°C

0.016(0.40)

Dimensions in inches and (millimeter)

WBFBP-03E/SOT-883

0.041(1.05)

0.037(0.95)

0.026(0.65)

0.022(0.55)

0.004(0.10)

0.000(0.01)

0.022(0.55)

0.018(0.45)

0.025(0.64)

REF.

0.012(0.30)

0.008(0.20)

0.004(0.10)

0.002(0.05)

REF.

0.012(0.30)

0.008(0.20)

0.018(0.45)

REF.

0.015(0.37)

0.011(0.27)

0.002(0.05)

REF.

0.018(0.45)

REF.

0.015(0.37)

0.011(0.27)

Circuit Diagram

3

1

2

encapsulate diodes.

2. Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5.