MICROWAVE CORPORATION

11 - 37

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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

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11

HMC368LP4

v02.0604

Absolute Maximum Ratings

Pin Locations & Outline Drawing

Typical Supply Current vs. Vdd

Vdd (V)

Idd (mA)

4.5

73

5.0

75

5.5

77

RF Input (Vdd = +5V)

+20 dBm

Supply Voltage, Vd1, Vd2

+6.0V

Gate Bias Voltage (Vg1, Vg2)

-4 to 0 Vdc

Channel Temperature

150 °C

Continuous Pdiss (T = 85 °C)

(derate 12.5 mW/°C above 85 °C)

812 mW

Thermal Resistance

(junction to ground paddle)

80 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

Note: Amp-Doubler-Amp will operate over full voltage

range shown above.

SMT GaAs PHEMT MMIC

AMP-DOUBLER-AMP, 9.0 - 16.0 GHz OUTPUT

NOTES:

1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY

3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE

6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.

PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.

7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.

8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED

TO PCB RF GROUND.

9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB

LAND PATTERN.