High Dynamic Range Low Noise Amplifier

1400 - 2000 MHz

Rev. V1

MAAMSS0045

2

2

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2

Parameter

Absolute Maximum

+10 VDC

Input Power

+17 dBm

80 mA

+150°C

Operating Temperature

-40°C to +85°C

Storage Temperature

-65°C to +150°C

4. Exceeding any one or combination of these limits may cause

permanent damage.

5. M/A-COM does not recommend sustained operation near

these survivability limits.

6. When pin #2 is used to increase current. (See note 9)

7. Thermal resistance (

jc) = +99°C/W.

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive to

electrostatic discharge (ESD) and can be damaged by

static electricity. Proper ESD control techniques should

be used when handling these devices.

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Gain

3 V, 20 mA

dB

dB

12.0

—

14

12.5

—

—

Noise Figure

3 V, 20 mA

dB

dB

—

—

1.4

1.5

1.8

—

Input VSWR

—

Ratio

—

1.5:1

—

Output VSWR

—

Ratio

—

2.0:1

—

Output 1 dB Compression

3 V, 20 mA

dBm

dBm

—

—

16.0

9.0

—

—

Input IP3

3 V, 20 mA

dBm

dBm

13.0

—

15

8.0

—

—

Reverse Isolation

—

dB

—

22

—

Drain Current

mA

30

45

60

3. Using external 15 Ω resistor. See functional schematic on page 3.