2SB985 datasheet(1/1 Pages) DGNJDZ

Part #	2SB985

Description	TO-92MOD Plastic-Encapsulate Transistors

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Manufacturer	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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TO-92MOD Plastic-Encapsulate Transistors

2SB985

TRANSISTOR (PNP)

FEATURES

Power

Supplies, Relay Drivers, Lamp Drivers

Adoption of FBET,MBIT

Processes

Low

Saturation Voltage

Large

Current Capacity and Wide ASO

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-50

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current -Continuous

-3

A

PC

Collector Power Dissipation

0.9

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=-10μA, IE=0

-60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-1mA, IB=0

-50

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-10μA, IC=0

-6

V

Collector cut-off current

ICBO

VCB=-40V, IE=0

-1

μA

Emitter cut-off current

IEBO

VEB=-4V, IC=0

-1

μA

hFE(1)

VCE=-2V, IC=-100mA

100

560

DC current gain

hFE(2)

VCE=-2V, IC=-3A

40

Collector-emitter saturation voltage

VCE(sat)

IC=-2A, IB=-100mA

-0.7

V

Base-emitter saturation voltage

VBE(sat)

IC=-2A, IB=-100mA

-1.2

V

Transition frequency

fT

VCE=-10V, IC=-50mA

150

MHz

Collector output capacitance

Cob

VCB=-10V, IE=0, f=1MHz

39

pF

CLASSIFICATION OF

hFE(1)

Rank

R

S

T

U

Range

100-200

140-280

200-400

280-560

TO-92MOD

1. EMITTER

2. COLLECTOR

3. BASE

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