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FT2000G Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # FT2000G
Description  Fast Silicon Rectifiers
PDF  2 Pages
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

FT2000G Datasheet(HTML) 1 Page - Diotec Semiconductor

  FT2000G Datasheet HTML 1Page - Diotec Semiconductor FT2000G Datasheet HTML 2Page - Diotec Semiconductor  
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Preliminary
Vorläufig
1) Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlußdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
1
FT 2000 A … FT 2000 G
Fast Silicon Rectifiers
Schnelle Silizium Gleichrichter
Version 2004-06-24
Nominal current – Nennstrom
20 A
Repetitive peak reverse voltage
50…400 V
Periodische Spitzensperrspannung
Plastic case
TO-220AC
Kunststoffgehäuse
Weight approx. – Gewicht ca.
2.2 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1/Tab = Cathode
2 = Anode
Standard packaging in tubes
Standard Lieferform in Stangen
Maximum ratings
Grenzwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
V
RSM [V]
FT 2000 A
50
50
FT 2000 B
100
100
FT 2000 D
200
200
FT 2000 G
400
400
Max. average forward rectified current, R-load
T
C = 100°C
I
FAV
20 A
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
f > 15 Hz
I
FRM
80 A
1)
Periodischer Spitzenstrom
Peak forward surge current, 50 Hz half sine-wave
T
A = 25°C
I
FSM
375 A
Stoßstrom für eine 50 Hz Sinus-Halbwelle
Peak forward surge current, 60 Hz half sine-wave
T
A = 25°C
I
FSM
390 A
Stoßstrom für eine 60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
T
A = 25°C
i
2t
680 A
2s
Grenzlastintegral, t < 10 ms
Operating junction temperature – Sperrschichttemperatur
T
j
– 50…+150°C
Storage temperature – Lagerungstemperatur
T
S
– 50…+175°C


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