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2SA843 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2SA843
Description  쨌Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min)
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SA843 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
2SA843
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -150V(Min)
·DC Current Gain
: hFE= 60-200@ IC= -0.4A
·Complement to Type 2SC1683
APPLICATIONS
·Audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-0.5
A
ICM
Collector Current-Peak
-2
A
PC
Total Power Dissipation
@ TC=25℃
20
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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