PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

650

V

Gate-Source Voltage

±30

V

Avalanche Current (Note2)

4.4

A

Drain Current

Continuous

4.0

A

Pulsed (Note2)

16

A

Avalanche Energy

Single Pulsed (Note3)

mJ

4N65-E

200

Repetitive (Note2)

10.6

mJ

Peak Diode Recovery dv/dt (Note4)

dv/dt

4.5

V/ns

Power Dissipation

TO-220

106

W

TO-220F

36

Junction Temperature

+150

°

Operating Temperature

-55 ~ +150

°

Storage Temperature

-55 ~ +150

°

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

PACKAGE

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220

TO-220F

JA

62.5

° /W

Junction to Case

TO-220

Jc

1.18

° /W

TO-220F

3.47

NJ4N65 POWER MOSFET

TO-2

51

50

TO-2

52

50

TO-2

51

83

TO-2

52

83

TO-2

51

2.5

TO-2

52

2.5