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BAV19WS Datasheet(PDF) 1 Page - Diotec Semiconductor |
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BAV19WS Datasheet(HTML) 1 Page - Diotec Semiconductor |
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1 / 2 page ![]() 1) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm 2 Kupferbelag (Lötpad) an jedem Anschluß 2) Tested with pulses t p = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% 1 Type Code 1.7 2.5 ±0.2 BAV19WS ... BAV21WS Small Signal Si-Diodes Surface mount Small Signal Diodes Kleinsignal-Dioden für die Oberflächenmontage Version 2004-04-09 Power dissipation – Verlustleistung 200 mW Repetitive peak reverse voltage 120...250 V Periodische Spitzensperrspannung Plastic case SOD-323 Kunststoffgehäuse Weight approx. – Gewicht ca. 0.005 g Dimensions / Maße in mm Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (T A = 25°C) Grenzwerte (T A = 25°C) BAV19WS, BAV20WS, BAV21WS Power dissipation – Verlustleistung P tot 200 mW 1) Max. average forward current (dc) Dauergrenzstrom I FAV 200 mA 1) Repetitive peak forward current Periodischer Spitzenstrom I FRM 625 mA 1) Peak forward surge current Stoßstrom-Grenzwert t p ≤ 1 s t p ≤ 1 µs I FSM I FSM 1 A 2.5 A Repetitive peak reverse voltage Periodische Spitzensperrspannung BAV19WS BAV20WS BAV21WS V RRM V RRM V RRM 120 V 200 V 250 V Junction temperature – Sperrschichttemperatur T j 150°C Storage temperature – Lagerungstemperatur T S - 55…+ 150°C Characteristics (T j = 25°C) Kennwerte (T j = 25°C) Forward voltage 2) Durchlaßspannung I F = 100 mA I F = 200 mA V F V F < 1 V < 1.25 V Leakage current 2) Sperrstrom T j = 25°C BAV19WS BAV20WS BAV21WS V R = 100 V V R = 150 V V R = 200 V I R < 100 nA T j = 150°C BAV19WS BAV20WS BAV21WS V R = 100 V V R = 150 V V R = 200 V I R < 15 µA |
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