BCP54 datasheet(2/2 Pages) DIOTEC

2 / 2 page

1) Tested with pulses t

p = 300

:s, duty cycle # 2% – Gemessen mit Impulsen t

p = 300

:s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

General Purpose Transistors

BCP 54, BCP 55, BCP 56

Characteristics (T

j = 25

/C)

Kennwerte (T

j = 25

/C)

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis 1)

CE = 2 V, IC = 150 mA

BCP 5x-6

–

100

BCP 5x-10

–

160

BCP 5x-16

100

–

250

CE = 2 V, IC = 5 mA

BCP 54...

BCP56

–

CE = 2 V, IC = 500 mA

–

Base-Emitter voltage – Basis-Emitter-Spannung 1)

CE = 2 V, IC = 500 mA

BEon

–

1 V

Gain-Bandwidth Product – Transitfrequenz

CE = 5 V, IC = 10 mA, f = 100 MHz

–

130 MHz

–

DC current gain ratio of the complement. pairs

Verhältnis der Stromverst. complement. Paare

FE1

FE2

–

1.6

Thermal resistance – Wärmewiderstand

junction to ambient air – Sperrschicht zu umgebender Luft

thA

95 K/W 2)

junction to soldering point – Sperrschicht zu Lötpad

thS

14 K/W

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BCP 51, BCP 52, BCP 53

BCP54 Datasheet(PDF) 2 Page - Diotec Semiconductor

BCP54 Datasheet(HTML) 2 Page - Diotec Semiconductor

Html Pages

1 2

Datasheet Download

Link URL