2SA1440 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

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isc Silicon PNP Power Transistor

2SA1440

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= -2.0A ; IB= -0.2A, L= 1mH

-60

VCEX(SUS)

Collector-Emitter Sustaining Voltage

IC= -2.0A ; IB1=-IB2= -0.2A,

VBE(OFF)=1.5V, L=180μ H,clamped

-60

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= -2A; IB= -0.1A

-0.3

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= -3A; IB= -0.15A

-0.5

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= -2A; IB= -0.1A

-1.2

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= -3A; IB= -0.15A

-1.5

ICBO

Collector Cutoff Current

VCB= -60V; IE=0

-10

μ A

ICER

Collector Cutoff Current

VCE= -60V; RBE= 50Ω ,Ta=125℃

-1.0

ICEX

Collector Cutoff Current

VCE= -60V; VBE(off)= -1.5V

VCE= -60V; VBE(off)= -1.5V,Ta=125℃

-10

-1.0

μ A

IEBO

Emitter Cutoff Current

VEB= -5V; IC=0

-10

μ A

hFE-1

DC Current Gain

IC= -0.3A ; VCE= -2V

100

hFE-2

DC Current Gain

IC= -0.5A ; VCE= -2V

100

400

hFE-3

DC Current Gain

IC= -2.0A ; VCE= -2V

Current-Gain

—Bandwidth Product

IC=-0.3A ; VCE= -10V

MHz

 h

FE-2 Classifications

100-200

150-300

200-400

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