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BFG193 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # BFG193
Description  Low Noise Figure
PDF  5 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BFG193 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  BFG193 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BFG193 Datasheet HTML 2Page - Inchange Semiconductor Company Limited BFG193 Datasheet HTML 3Page - Inchange Semiconductor Company Limited BFG193 Datasheet HTML 4Page - Inchange Semiconductor Company Limited BFG193 Datasheet HTML 5Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc RF Product Specification
isc website：www.iscsemi.cn
2
isc Silicon NPN RF Transistor
BFG193
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 1mA ; IB= 0
12
V
ICES
Collector Cutoff Current
VCE= 20V; VBE= 0
100
μ
A
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
0.1
μ
A
IEBO
Emitter Cutoff Current
VEB= 1V; IC= 0
1
μ
A
hFE
DC Current Gain
IC= 30mA ; VCE= 8V
50
200
fT
Current-Gain—Bandwidth Product
IC= 50mA ; VCE= 8V; f= 500MHz
6
8
GHz
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1MHz
0.6
0.9
pF
PG
Power Gain
IC= 30mA ; VCE= 8V; f= 900MHz
15.5
dB
PG
Power Gain
IC= 30mA ; VCE= 8V; f= 1.8GHz
10
dB
︱
S21e︱2 Insertion Power Gain
IC= 30mA ; VCE= 8V; f= 900MHz
13.5
dB
︱
S21e︱2 Insertion Power Gain
IC= 30mA ; VCE= 8V; f= 1.8GHz
8
dB
NF
Noise Figure
IC= 10mA ; VCE= 8V; f= 900MHz
1.3
dB
NF
Noise Figure
IC= 10mA ; VCE= 8V; f= 1.8GHz
2.1
dB



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