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2SB791 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB791 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Darlington Power Transistor 2SB791 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; RBE= ∞ -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -50mA; IC= 0 -7 V VCE(sat)-1★ Collector-Emitter Saturation Voltage IC= -4A; IB= -8mA -1.5 V VCE(sat)-2★ Collector-Emitter Saturation Voltage IC= -8A; IB= -80mA -3.0 V VBE(sat)-1★ Base-Emitter Saturation Voltage IC= -4A; IB= -8mA -2.0 V VBE(sat)-2★ Base-Emitter Saturation Voltage IC= -8A; IB= -80mA -3.5 V ICBO Collector Cutoff Current VCB= -120V; IE= 0 -100 μ A ICEO Collector Cutoff Current VCE= -100V; RBE= ∞ -10 μ A hFE★ DC Current Gain IC= -4A; VCE= -3V 1000 20000 Switching times ton Turn-on Time IC= -4A , IB1= -IB2= -8mA 0.5 μ s tstg Storage Time 1.6 μ s tf Fall Time 1.5 μ s ★:Pulse Test |
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