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2SC5086 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC5086 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 7 page ![]() INCHANGE Semiconductor isc RF Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN RF Transistor 2SC5086 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 1 μ A IEBO Emitter Cutoff Current VEB= 1V; IC= 0 1 μ A hFE DC Current Gain IC= 20mA ; VCE= 10V 80 240 ︱ S21e︱2 Insertion Power Gain IC= 20mA ; VCE= 10V; f= 500MHz 16.5 dB ︱ S21e︱2 Insertion Power Gain IC= 20mA ; VCE= 10V; f= 1GHz 7.5 11 dB fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 10V 5 7 GHz COB Output Capacitance VCB= 10V; IE= 0; f= 1.0MHz 1.0 pF Cre Feed-Back Capacitance VCB= 10V; IE= 0; f= 1.0MHz 0.65 1.15 pF NF Noise Figure IC= 5mA ; VCE= 10V; f= 500MHz 1 dB NF Noise Figure IC= 5mA ; VCE= 10V; f= 1GHz 1.1 2 dB hFE Classification O Y 80-160 120-240 |
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