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CT3A01-R3 Datasheet(PDF) 3 Page - CT Micro International Corporation

Part # CT3A01-R3
Description  N-Channel Enhancement MOSFET
PDF  11 Pages
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Manufacturer  CTMICRO [CT Micro International Corporation]
Direct Link  http://www.ct-micro.com/
Logo CTMICRO - CT Micro International Corporation

CT3A01-R3 Datasheet(HTML) 3 Page - CT Micro International Corporation

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CT Micro
Rev 4
Proprietary & Confidential
Page 3
Jun, 2015
CT3A01-R3
N-Channel Enhancement MOSFET
Electrical Characteristics T
A = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
BVDSS
Drain-Source Breakdown Voltage
VGS= 0V, ID= 250µA
20
-
-
V
IDSS
Drain-Source Leakage Current
VDS = 20V, VGS = 0V
-
-
1
µ
A
IGSS
Gate-Source Leakage Current
VGS =
±8V, VDS = 0V
-
-
±100
nA
On Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
RDS(ON)
Drain-Source On-Resistance
VGS = 4.5V, ID = 3.2A
-
55
85
m
3
VGS = 2.5V, ID = 2.5A
-
65
115
m
VGS = 1.8V, ID = 2.0A
-
80
130
m
VGS(th)
Gate-Source Threshold Voltage
VGS = VDS, ID =250µA
0.75
1.2
V
3
Dynamic Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
CISS
Input Capacitance
VGS =0V,
-
455
-
pF
COSS
Output Capacitance
VDS =15V
-
90
-
CRSS
Reverse Transfer Capacitance
f=1MHz
-
60
-
Switching Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
TD(ON)
Turn-On Delay Time
VDS = 15V ,
VGS = 4.5V,
RG = 6 ,
ID =1.0A
-
9
-
ns
TR
Rise Time
-
4
-
TD(OFF)
Turn-Off Delay Time
-
20
-
TF
Fall Time
-
4.5
-
QG
Total Gate Charge
VDS = 10V ,
-
6.4
-
nC
QGS
Gate-Source Charge
VGS = 4.5V,
-
3
-
QGD
Gate-Drain (Miller) Charge
ID =3.2A
-
3.0
-



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