MMBTA42 datasheet(2/3 Pages) COMCHIP

2 / 3 page

MDS0605002A

Page 2

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector − Emitter Breakdown Voltage (Note 3)

(IC = 1.0 mAdc, IB = 0)

MMBTA42

MMBTA43

V(BR)CEO

300

200

−

Vdc

Collector − Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

MMBTA42

MMBTA43

V(BR)CBO

300

200

−

Vdc

Emitter − Base Breakdown Voltage

(IE = 100 mAdc, IC = 0)

V(BR)EBO

6.0

−

Vdc

Collector Cutoff Current

(VCB = 200 Vdc, IE = 0)

MMBTA42

(VCB = 160 Vdc, IE = 0)

MMBTA43

ICBO

−

0.1

mAdc

Emitter Cutoff Current

(VEB = 6.0 Vdc, IC = 0)

MMBTA42

(VEB = 4.0 Vdc, IC = 0)

MMBTA43

IEBO

−

0.1

mAdc

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc)

Both Types

(IC = 10 mAdc, VCE = 10 Vdc)

Both Types

(IC = 30 mAdc, VCE = 10 Vdc)

MMBTA42

MMBTA43

hFE

−

Collector − Emitter Saturation Voltage

(IC = 20 mAdc, IB = 2.0 mAdc)

MMBTA42

MMBTA43

VCE(sat)

−

0.5

Vdc

Base−Emitter Saturation Voltage

(IC = 20 mAdc, IB = 2.0 mAdc)

VBE(sat)

−

0.9

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current − Gain − Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

−

MHz

Collector−Base Capacitance

(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)

MMBTA42

MMBTA43

Ccb

−

3.0

4.0

3. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

High Voltage Transistors

www.comchiptech.com

COMCHIP

ELECTRICAL CHARACTERISTICS (TA = 25OC unless otherwise noted)

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