MMBT3906 datasheet(1/5 Pages) COMCHIP

Part #	MMBT3906

Description	General Purpose Transistor (PNP)

PDF	5 Pages

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Manufacturer	COMCHIP [Comchip Technology]

Direct Link	http://www.comchiptech.com

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MMBT3906

Features

Epitaxial Planar Die Construction

Complementary NPN Type Available

(MMBT3904)

Ideal for Medium Power Amplification and

Switching

General Purpose Transistor (PNP)

www.comchiptech.com

COMCHIP

MDS030600

2A

Page 1

PNP Silicon Type

SOT-23

Dimensions in inches (millimeters)

.037(0.95) .037(0.95)

.119 (3.0)

.020 (0.5)

Top View

.103 (2.6)

.110 (2.8)

.086 (2.2)

.020 (0.5)

3

12

COLLECTOR

3

1

BASE

2

EMITTER

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector – Emitter Voltage

VCEO

–40

Vdc

Collector – Base Voltage

VCBO

–40

Vdc

Emitter – Base Voltage

VEBO

–5.0

Vdc

Collector Current — Continuous

IC

–200

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board(1)

TA = 25°C

Derate above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance Junction to Ambient

RqJA

556

°C/W

Total Device Dissipation

Alumina Substrate,(2) TA = 25°C

Derate above 25

°C

PD

300

2.4

mW

mW/

°C

Thermal Resistance Junction to Ambient

RqJA

417

°C/W

Junction and Storage Temperature

TJ, Tstg

– 55 to +150

°C

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