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MMBT2222A Datasheet(PDF) 2 Page - Comchip Technology |
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MMBT2222A Datasheet(HTML) 2 Page - Comchip Technology |
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2 / 3 page  Electrical Characteristics (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit VCE = 10 V, IC = 0.1 mA 35 — — VCE = 10 V, IC = 1 mA 50 — — VCE = 10 V, IC = 10 mA 75 — — DC Current Gain hFE VCE = 10 V, IC = 10 mA 35 ——— TA = -55°C VCE = 10 V, IC = 150 mA (1) 100 — 300 VCE = 10 V, IC = 500 mA (1) 40 — — VCE = 1.0 V, IC = 150 mA (1) 50 — — Collector-Base Breakdown Voltage V(BR)CBO IC = 10 µA, IE = 0 75 — — V Collector-Emitter Breakdown Voltage(1) V(BR)CEO IC = 10 mA, IB = 0 40 — — V Emitter-Base Breakdown Voltage V(BR)EBO IC = 10 µA, IC = 0 6.0 — — V Collector-Emitter Saturation Voltage(1) VCEsat IC = 150 mA, IB = 15 mA — — 0.3 V IC = 500 mA, IB = 50 mA — — 1.0 Base-Emitter Saturation Voltage(1) VBEsat IC = 150 mA, IB = 15 mA 0.6 — 1.2 V IC = 500 mA, IB = 50 mA — — 2.0 Collector Cut-off Current ICEX VEB = 3 V, VCE = 60 V — — 10 nA VCB = 60 V, IE = 0 — — 10 nA Collector Cut-off Current ICBO VCB = 50 V, IE = 0 V —— 10 µA TA = 125°C Base Cut-off Current IBL VEB = 3 V, VCE = 60 V — — 20 nA Emitter Cut-off Current IEBO VEB = 3 VDC, IC = 0 — — 100 nA Current Gain-Bandwidth Product fT VCE = 20 V, IC = 20 mA 300 — — MHz f = 100 MHz Output Capacitance Cobo VCB = 10 V, f = 1 MHz, IE = 0 — — 8 pF Input Capacitance Cibo VEB = 0.5 V, f = 1 MHz, IC = 0 — — 25 pF Noise Figure NF VCE = 10 V, IC = 100 µA, — — 4.0 dB RS =1 k Ω, f = 1 kHz VCE = 10 V, IC = 1 mA 2 — 8.0 Input Impedance hie f = 1 kHz k Ω VCE = 10 V, IC = 10 mA 0.25 — 1.25 f = 1 kHz VCE = 10 V, IC = 1 mA, 50 — 300 Small Signal Current Gain hfe f = 1 kHz — VCE = 10 V, IC = 10 mA, 75 — 375 f = 1 kHz Voltage Feedback Ratio hre VCE = 10 V, IC = 1 mA, 50 — 300 — f = 1 kHz 75 — 375 VCE = 10 V, IC = 1 mA, 5.0 — 35 Output Admittance hoe f = 1 kHz µS VCE = 10 V, IC = 10 mA, 25 — 200 f = 1 kHz Note: (1) Pulse Test: Pulse width ≤ 300 µs - Duty cycle ≤ 2% www.comchiptech.com COMCHIP COMCHIP Small Signal Transistor (NPN) Page 2 |
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